csd-8m csd-8n surface mount silicon controlled rectifier 8 amp, 600 thru 800 volts description: the central semiconductor csd-8m series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol csd-8m csd-8n units peak repetitive off-state voltage v drm, v rrm 600 800 v rms on-state current (t c =90c) i t(rms) 8.0 a peak one cycle surge, t=10ms i tsm 80 a i 2 t value for fusing, t=10ms i 2 t 32 a 2 s peak gate power, tp=10s p gm 40 w average gate power dissipation p g (av) 1.0 w peak forward gate current, tp=10s i fgm 4.0 a peak forward gate voltage, tp=10s v fgm 16 v peak reverse gate voltage, tp=10s v rgm 5.0 v critical rate of rise of on-state current di/dt 50 a/s operating junction temperature t j -40 to +125 c storage temperature t stg -40 to +150 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm 10 a i drm, i rrm rated v drm, v rrm, t c =125c 2.0 ma i gt v d =12v, r l =10 3.0 15 ma i h i t =100ma 7.3 20 ma v gt v d =12v, r l =10 0.9 1.5 v v tm i tm =16a, tp=380s 1.3 1.8 v dv/dt v d = 2 / 3 v drm , t c =125c 200 v/s dpak thyristor case r1 (17-february 2010) www.centralsemi.com
csd-8m csd-8n surface mount silicon controlled rectifier 8 amp, 600 thru 800 volts lead code: 1) cathode 2) anode 3) gate 4) anode marking: full part number dpak thyristor case - mechanical outline www.centralsemi.com r1 (17-february 2010)
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